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PDF资料 > BS3500N-C-F PDF资料
BS3500N-C-F
型号：BS3500N-C-F
描述：Eliminates overvoltage caused by fast rising transients
厂商：BENCENT [Shenzhen Bencent Electronics Co., Ltd.]
下载PDF
PDF大小：272.05 K
页数：5 页
型号BS35GR05X10RP参数
| 厂商 | 型号 | 描述 | 页数 | 下载 |
|---|---|---|---|---|
BITECH |
BS3-SE | BS DIP | 7 页 |
|
BENCENT |
BS3500N-A-F | Eliminates overvoltage caused by fast rising transients | 5 页 |
|
IVO |
BS30 | My-Com precision switches | 1 页 |
|
ETC1 |
BS3G100 | GORE-SHIELD? GS2100 EMI Gasket is a conductive, adhesive backed, EMI gasketing material that is moderately soft and is approved for spacefl ight and military applications. | 2 页 |
|
SPANSION |
BS320GBC4V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 |
|
|
SPANSION |
BS320GTC4V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 |
|
|
SPANSION |
BS320GBC3V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 |
|
|
SPANSION |
BS320GTC3V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 |
|
|
SPANSION |
BS320GBD4V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 |
|
|
SPANSION |
BS320GTD4V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 |
|
|
SPANSION |
BS320GBD3V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 |
|
|
SPANSION |
BS320GTD3V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 |
|
|
SPANSION |
BS320GBC9V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 |
|
|
SPANSION |
BS320GTC9V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 |
|
|
SPANSION |
BS320GBC8V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 |
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