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PDF资料 > BS3G100 PDF资料
BS3G100
型号:BS3G100
描述:GORE-SHIELD? GS2100 EMI Gasket is a conductive, adhesive backed, EMI gasketing material that is moderately soft and is approved for spacefl ight and military applications.
厂商:ETC1 [List of Unclassifed Manufacturers]
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PDF大小:70.95 K
页数:2 页
厂商 | 型号 | 描述 | 页数 | 下载 |
---|---|---|---|---|
BITECH |
BS3-SE | BS DIP | 7 页 | |
BENCENT |
BS3500N-C-F | Eliminates overvoltage caused by fast rising transients | 5 页 | |
BENCENT |
BS3500N-A-F | Eliminates overvoltage caused by fast rising transients | 5 页 | |
IVO |
BS30 | My-Com precision switches | 1 页 | |
SPANSION |
BS320GBC4V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 | |
SPANSION |
BS320GTC4V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 | |
SPANSION |
BS320GBC3V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 | |
SPANSION |
BS320GTC3V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 | |
SPANSION |
BS320GBD4V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 | |
SPANSION |
BS320GTD4V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 | |
SPANSION |
BS320GBD3V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 | |
SPANSION |
BS320GTD3V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 | |
SPANSION |
BS320GBC9V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 | |
SPANSION |
BS320GTC9V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 | |
SPANSION |
BS320GBC8V | 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 74 页 |