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型号SGB07N120ATMA1参数
型号 | 供应商 | 数量 | 厂商/品牌 | 封装 | 批号 | 说明 | 联系 |
---|---|---|---|---|---|---|---|
SGB06N60V-E3045A
|
|
500 | - | - | 最新批号 | 现货库存 |
|
SGB02N120
|
|
1000 | Infineon Technologies | N/A | 近三年内 | - |
|
SGB02N120
|
|
1000 | Infineon Technologies | N/A | 近三年内 | - | |
SGB02N60E3045A
|
|
1000 | SIEMENS | N/A | 21+ | - |
|
SGB02N60E3045A
|
|
1000 | SIEMENS | N/A | 21+ | - | |
SGB02N60-E3045A
|
|
1000 | - | - | 08/09+ | - |
|
厂商 | 型号 | 描述 | 页数 | 下载 |
---|---|---|---|---|
INFINEON |
SGB30N60 | Fast IGBT in NPT-technology | 12 页 | |
INFINEON |
SGB06N60 | Fast IGBT in NPT-technology | 12 页 | |
STANFORD |
SGB-2433 | DC - 4 GHz Active Bias Gain Block | 6 页 | |
INFINEON |
SGB02N120 | Fast S-IGBT in NPT-technology | 12 页 | |
INFINEON |
SGB07N120 | Fast IGBT in NPT-technology | 11 页 | |
INFINEON |
SGB15N60 | Fast IGBT in NPT-technology | 12 页 | |
INFINEON |
SGB10N60A | Fast IGBT in NPT-technology | 12 页 | |
ETC |
SGB-4533 | DC - 3 GHz Active Bias Gain Block | 6 页 | |
ETC |
SGB-2233 | DC-4.5GHz Active Bias Gain Block | 6 页 | |
DSK |
SGBPC35005 | THREE - PHASE SILICON BRIDGES | 2 页 | |
RFMD |
SGB6433Z | DC to 3.5GHz ACTIVE BIAS GAIN BLOCK | 8 页 | |
RFMD |
SGB2233Z | DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK | 8 页 | |
RFMD |
SGB-6433 | DC to 3.5GHz ACTIVE BIAS GAIN BLOCK High Reliability SiGe HBT Technology | 8 页 | |
RFMD |
SGB-6433Z | DC to 3.5GHz ACTIVE BIAS GAIN BLOCK High Reliability SiGe HBT Technology | 8 页 | |
RFMD |
SGB2433Z | DC to 4GHZ ACTIVE BIAS GAIN BLOCK High Reliability SiGe HBT Technology | 5 页 |