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MGFS36E2527_10
型号：MGFS36E2527_10
描述：2.5-2.7GHz HBT HYBRID IC
厂商：MITSUBISHI [Mitsubishi Electric Semiconductor]
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PDF大小：78.8 K
页数：7 页
| 型号 | 供应商 | 数量 | 厂商/品牌 | 封装 | 批号 | 说明 | 联系 |
|---|---|---|---|---|---|---|---|
|
MGFS36E2527-01
|
|
500 | - | - | 最新批号 | 原装现货 |
|
|
MGFS44WB
|
|
500 | - | - | 最新批号 | 原装现货 |
|
|
MGFS45B2325C01
|
|
500 | - | - | 最新批号 | 现货库存 |
|
|
MGFS45B2325C-01
|
|
500 | - | - | 最新批号 | 原装现货 |
|
|
MGFS45V2123-52
|
|
500 | - | - | 最新批号 | 现货库存 |
|
|
MGFS45V2123C
|
|
500 | - | - | 最新批号 | 现货库存 |
|
| 厂商 | 型号 | 描述 | 页数 | 下载 |
|---|---|---|---|---|
MITSUMI |
MGF1402B | LOW NOISE GaAs FET | 5 页 |
|
MITSUBISHI |
MGFC36V4450A | 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET | 2 页 |
|
|
MITSUBISHI |
MGFC38V5867 | 5.8~6.75 GHZ BAND 6W INTERNALLY MATCHED GAASFET | 3 页 |
|
|
MITSUBISHI |
MGF0919A | L & S BAND GaAs FET [ SMD non matched ] | 4 页 |
|
|
MITSUBISHI |
MGF1951A-01 | Medium Power Microwave MESFET | 4 页 |
|
|
MITSUBISHI |
MGF1951A | Medium Power Microwave MESFET | 4 页 |
|
SANKEN |
MGF65A4L | Trench Field Stop IGBTs with Fast Recovery Diode | 15 页 |
|
|
SANKEN |
MGF65A3L | Trench Field Stop IGBTs with Fast Recovery Diode | 15 页 |
|
|
SANKEN |
MGF65A6H | Trench Field Stop IGBTs with Fast Recovery Diode | 14 页 |
|
|
SANKEN |
MGF65A4H | Trench Field Stop IGBTs with Fast Recovery Diode | 15 页 |
|
|
SANKEN |
MGF65A3H | Trench Field Stop IGBTs with Fast Recovery Diode | 15 页 |
|
|
SANKEN |
MGF65A4H | Trench Field Stop IGBTs with Fast Recovery Diode | 15 页 |
|
|
SANKEN |
MGF65A3H | Trench Field Stop IGBTs with Fast Recovery Diode | 15 页 |
|
|
MITSUBISHI |
MGF1601B-01 | High-power GaAs FET | 4 页 |
|
|
MITSUBISHI |
MGF0918A | L & S BAND GaAs FET [ SMD non - matched ] | 3 页 |
|
