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PDF资料 > IPT2508-BEB PDF资料
IPT2508-BEB
型号：IPT2508-BEB
描述：High current density due to double mesa technology
厂商：IPS [IP SEMICONDUCTOR CO., LTD.]
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PDF大小：214.63 K
页数：4 页
| 型号 | 供应商 | 数量 | 厂商/品牌 | 封装 | 批号 | 说明 | 联系 |
|---|---|---|---|---|---|---|---|
|
IPT20RT1100080G
|
|
1000 | 原装进口无铅 | PDF下载 | 07+ | - |
|
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IPT20RT1100080G
|
|
1000 | 原装进口无铅 | PDF下载 | 07+ | - |
|
|
IPT230
|
|
1000 | Hutson Industries | Datasheet | 06/07+ | - |
|
|
IPT230
|
|
1000 | Hutson Industries | Datasheet | 06/07+ | - |
|
|
IPT2400C
|
|
1000 | Intel | Datasheet | 07+ | - |
|
|
IPT2400C
|
|
1000 | Intel | Datasheet | 07+ | - |
|
| 厂商 | 型号 | 描述 | 页数 | 下载 |
|---|---|---|---|---|
INFINEON |
IPT004N03L | Metal Oxide Semiconductor Field Effect Transistor | 12 页 |
|
|
INFINEON |
IPT007N06N | Metal Oxide Semiconductor Field Effect Transistor | 12 页 |
|
|
INFINEON |
IPT059N15N3 | Metal Oxide Semiconductor Field Effect Transistor | 12 页 |
|
|
INFINEON |
IPT020N10N3 | Metal Oxide Semiconductor Field Effect Transistor | 12 页 |
|
|
INFINEON |
IPT059N15N3G | Metal Oxide Semiconductor Field Effect Transistor | 12 页 |
|
|
INFINEON |
IPT65R033G7 | 650V CoolMOS? C7 Gold series (G7) Power Transistor | 14 页 |
|
|
INFINEON |
IPT65R105G7 | 650V CoolMOS? C7 Gold series (G7) Power Transistor | 14 页 |
|
|
INFINEON |
IPT65R195G7 | 650V CoolMOS? C7 Gold series (G7) Power Transistor | 14 页 |
|
|
INFINEON |
IPT111N20NFD | OptiMOS?3 Power-Transistor, 200 V | 10 页 |
|
|
INFINEON |
IPT210N25NFD | OptiMOS?3 Power-Transistor, 250 V | 10 页 |
|
|
INFINEON |
IPT015N10N5 | Ideal for high frequency switching and sync. rec | 12 页 |
|
|
INFINEON |
IPT012N08N5 | N-channel, normal level | 12 页 |
|
HAMMOND |
IPT66 | DATA SUBJECT TO CHANGE WITHOUT NOTLCE | 1 页 |
|
HONEYWELL |
IPT0050D33R-A | Integrated Pressure Transducer | 2 页 |
|
|
HONEYWELL |
IPT0020D33R-A | Integrated Pressure Transducer | 2 页 |
|
